Recent Progress in Researches on Sputter Deposition Process
نویسندگان
چکیده
منابع مشابه
Recent Progress in Allergen Immunotherapy
The efficacy of allergen immunotherapy for the treatment of allergic rhinoconjunctivitis with or without seasonal bronchial asthma and anaphylaxis caused by the sting of the hymenoptera class of insects has been clearly demonstrated in numerous well-designed, placebo-controlled trials. Immunotherapy whether by subcutaneous injection of allergen extract or by oral/sublingual routes modifies peri...
متن کاملSputter deposition processes
Sputter deposition is a widely used technique to deposit thin films on substrates. The technique is based upon ion bombardment of a source material, the target. Ion bombardment results in a vapor due to a purely physical process, i.e. the sputtering of the target material. Hence, this technique is part of the class of physical vapor deposition techniques, which includes, for example, thermal ev...
متن کاملRun by Run Advanced Process Control of Metal Sputter Deposition
Metal sputter deposition processes for semiconductor manufacturing are characterized by a decrease in deposition rate from run to run as the sputter target degrades. The goal is to maintain a desired deposition thickness from wafer to wafer and lot to lot. Run by run (RbR) model-based process control (MBPC) has been applied to metal sputter deposition processes at Texas Instruments. RbR MBPC, b...
متن کاملRecent German Researches on Malaria
The etiology of malaria is a study of paramount importance to the practitioner of tropical medicine. In different regions, the intensity of the poison may, to some degree, vary ; but in India, from Karachi to Sudia and Sirhind to Cape Comoriu, malaria is the cause of a greater total of sickness than perhaps all other diseases combined. Few of its inhabitants get through twelve months without au...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Shinku
سال: 2007
ISSN: 0559-8516,1880-9413
DOI: 10.3131/jvsj.50.3